High Optical Quality InP-Based Nanopillars Fabricated by a Top-Down Approach
2011 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 11, no 11, 4805-4811 p.Article in journal (Refereed) Published
Dense and uniform arrays of Top-based nanopillars were fabricated by dry etching using self-assembly of colloidal silica particles for masking. The pillars, both single and arrays, fabricated from epitaxially grown InP and InP/GaInAsP/InP quantum well structures :how excellent photoluminescence (PL) even at room temperature. The measured PL line widths are comparable to the as-grown wafer indicating high quality fabricated pillars. A stamping technique enables transfer with arbitrary densities of the nanopillars freed from the substrate by selectively etching a sacrificial InGaAs layer.
Place, publisher, year, edition, pages
2011. Vol. 11, no 11, 4805-4811 p.
Semiconductor nanopillars, quantum well, reactive ion etching, nanosphere lithography, photoluminescence, total reflectivity
IdentifiersURN: urn:nbn:se:kth:diva-50319DOI: 10.1021/nl202628mISI: 000296674700054ScopusID: 2-s2.0-80755125658OAI: oai:DiVA.org:kth-50319DiVA: diva2:480325
QC 201201192012-01-192011-12-052014-11-04Bibliographically approved