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Ferromagnetism in diluted magnetic semiconductors: A comparison between ab initio mean-field, RPA, and Monte Carlo treatments
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0003-4341-5663
2003 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 68, 081203- p.Article in journal (Refereed) Published
Abstract [en]

We have determined from first principles the Curie temperature in the diluted magnetic semiconductor (Ga1-x-yMnxAsy) As alloys, where the compensation effect by As antisites is taken into account. The disorder due to random positions of Mn impurities and As antisites is taken into account in the framework of the coherent potential approximation. We demonstrate that a simple mean-field approximation (MFA) already gets Tc accurately. In particular, it is shown that the calculated Tc in the random-phase approximation and Monte Carlo simulations differ only weakly from the MFA values. The reason is that a proper treatment of the disorder beyond the virtual-crystal approximation leads, in this doped material, to a flat magnon dispersion in a large part of the Brillouin zone.

Place, publisher, year, edition, pages
Americal Physical Society (APS) , 2003. Vol. 68, 081203- p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-62587DOI: 10.1103/PhysRevB.68.081203OAI: oai:DiVA.org:kth-62587DiVA: diva2:480636
Note
NR 20140805Available from: 2012-01-19 Created: 2012-01-19 Last updated: 2017-12-08Bibliographically approved

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Publisher's full texthttp://link.aps.org/doi/10.1103/PhysRevB.68.081203

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Bergqvist, Lars

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