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Diffusion of Zn and Mg in AlGaAs/GaAs structures grown by metalorganic vapor-phase epitaxy
Swedish Institute of Microelectronics, Sweden.ORCID iD: 0000-0002-4148-5679
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1990 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 67, no 2, 778-786 p.Article in journal (Refereed) Published
Abstract [en]

The diffusion of thin, highly p-doped layers in AlGaAs/GaAs single- and double-heterostructures, grown by metalorganic vapor-phase epitaxy, was studied with C-V etch profiling and secondary ion mass spectroscopy. The effect of different post-growth heat treatments was investigated and diffusion coefficients for both magnesium and zinc were measured. It was found that Mg diffuses about twice as fast Zn and that the order of magnitude of the diffusion coefficient is 10-14 cm2 s-1 at 900 °C, the exact value being process and concentration dependent. A model based on the interstitial-substitutional diffusion mechanism with suitable kinetic limitations was successfully used to simulate the observed dopant concentration profiles.We also found an anomalous strong diffusion of zinc from GaAs into highly n-doped AlGaAs. Detailed results on this and other structures are presented and implications for optimal design of heterostructure devices such as bipolar transistors are discussed.

Place, publisher, year, edition, pages
1990. Vol. 67, no 2, 778-786 p.
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Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-60835DOI: 10.1063/1.345731ISI: A1990CK49500027Scopus ID: 2-s2.0-0011217665OAI: oai:DiVA.org:kth-60835DiVA: diva2:481483
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QC 20150622

Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Nordell, NilsLinnarsson, Margareta K.

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