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SHIFTING PHOTOLUMINESCENCE BANDS IN HIGH-RESISTIVITY LI-COMPENSATED GAAS
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 47, 9418-9424 p.Article in journal (Refereed) Published
Abstract [en]

It is shown that Li diffusion of GaAs can give rise to semi-insulating samples with electrical resistivity as high as 10(7) OMEGAcm in undoped, n-type, and p-type starting materials. The optical properties of the compensated samples are correlated with the depletion of free carriers caused by the Li diffusion. The radiative recombination of the Li-compensated samples is dominated by emissions with excitation-dependent peak positions that shift to lower energies with increasing compensation. The photoluminescence properties are characteristic of fluctuations of the electrostatic potential in strongly doped, compensated crystals.

Place, publisher, year, edition, pages
1993. Vol. 47, 9418-9424 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60832DOI: 10.1103/PhysRevB.47.9418OAI: oai:DiVA.org:kth-60832DiVA: diva2:481487
Note
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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LINNARSSON, M

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