HIGHLY DOPED P+ REGIONS BY ZINC DIFFUSION UTILIZING METALORGANIC VAPOR-PHASE EPITAXY
1992 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 60, 1594-1596 p.Article in journal (Refereed) Published
Zinc-diffusion doping of GaAs using metalorganic vapor-phase epitaxy and DEZn as a dopant source is evaluated. The dependence of the diffusion profile on DEZn flow and diffusion time is presented. Typical zinc concentrations and depths obtained are 10(19)-10(21) cm-3 and 40-200 nm, respectively. The largest concentration gradient obtained in this manner was four orders of magnitude in 500 angstrom, and the highest zinc concentration was measured as 2 x 10(21) cm-3 at a sample surface. A heterojunction bipolar transistor fabricated using zinc-diffusion doping of the base and a regrown emitter showed an f(max) of 50 GHz.
Place, publisher, year, edition, pages
1992. Vol. 60, 1594-1596 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60833DOI: 10.1063/1.107263OAI: oai:DiVA.org:kth-60833DiVA: diva2:481488
NR 201408052012-01-212012-01-152012-01-21Bibliographically approved