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HIGHLY DOPED P+ REGIONS BY ZINC DIFFUSION UTILIZING METALORGANIC VAPOR-PHASE EPITAXY
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
1992 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 60, p. 1594-1596Article in journal (Refereed) Published
Abstract [en]

Zinc-diffusion doping of GaAs using metalorganic vapor-phase epitaxy and DEZn as a dopant source is evaluated. The dependence of the diffusion profile on DEZn flow and diffusion time is presented. Typical zinc concentrations and depths obtained are 10(19)-10(21) cm-3 and 40-200 nm, respectively. The largest concentration gradient obtained in this manner was four orders of magnitude in 500 angstrom, and the highest zinc concentration was measured as 2 x 10(21) cm-3 at a sample surface. A heterojunction bipolar transistor fabricated using zinc-diffusion doping of the base and a regrown emitter showed an f(max) of 50 GHz.

Place, publisher, year, edition, pages
1992. Vol. 60, p. 1594-1596
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60833DOI: 10.1063/1.107263OAI: oai:DiVA.org:kth-60833DiVA, id: diva2:481488
Note
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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