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ZN DELTA-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
1995 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 154, 231-239 p.Article in journal (Refereed) Published
Abstract [en]

A number of delta-doping parameters have been changed to study their effects on the hole concentration of Zn delta-doped GaAs grown by metalorganic vapour phase epitaxy using dimethylzinc (DMZn) as a doping precursor. We observed that the hole concentration is dependent on the DMZn partial pressure but independent of the gas now velocity in the reactor. A weak effect of the delta-doping time on the hole concentration infers that the near-equilibrium between the Zn adsorption and desorption can be reached very rapidly. In the regime of the delta-doping temperatures from 600 to 700 degrees C, the Zn desorption predominantly determines the hole concentration, and the Zn desorption activation energy obtained from the Arrhenius-type plot is 2.04 eV. Below 600 degrees C, however, the hole concentration departures from the Arrhenius-type relationship with the reciprocal delta-doping temperature, indicating that some other factors start to influence the Zn delta-doping concentration.

Place, publisher, year, edition, pages
1995. Vol. 154, 231-239 p.
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Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60829DOI: 10.1016/0022-0248(95)00193-XOAI: oai:DiVA.org:kth-60829DiVA: diva2:481490
Note
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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