SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
1994 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 85, 363-369 p.Article in journal (Refereed) Published
This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.
Place, publisher, year, edition, pages
1994. Vol. 85, 363-369 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60830DOI: 10.1016/0168-583X(94)95845-9OAI: oai:DiVA.org:kth-60830DiVA: diva2:481493
11th International Conference on Ion Beam Analysis (IBA-11), BALATONFURED, HUNGARY, JUL 05-09, 1993 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved