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SIMS AND DEPTH PROFILING OF SEMICONDUCTOR STRUCTURES
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1994 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 85, 363-369 p.Article in journal (Refereed) Published
Abstract [en]

This paper reviews recent secondary ion mass spectrometry (SIMS) work on (i) isotope shifts in ion implantation profiles, (ii) dopant profiles in silicon and beam-induced oxidation and (iii) surface roughness and profile broadening of Al(x)Ga1-(x)As/GaAs superlattice structures. Comparison is made with other techniques, and, in particular, the issues of depth resolution and conversion between sputtering time and sample depth are emphasized.

Place, publisher, year, edition, pages
1994. Vol. 85, 363-369 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60830DOI: 10.1016/0168-583X(94)95845-9OAI: oai:DiVA.org:kth-60830DiVA: diva2:481493
Note
11th International Conference on Ion Beam Analysis (IBA-11), BALATONFURED, HUNGARY, JUL 05-09, 1993 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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LINNARSSON, MK

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