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Electronic structure of the GaAs:Mn-Ga center
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1997 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 55, 6938-6944 p.Article in journal (Refereed) Published
Abstract [en]

The excitation spectrum of the O.11-eV Mn acceptor in GaAs has been thoroughly investigated by uniaxial stress and Zeeman fourier transform infrared spectroscopy. The results give strong evidence for the 3d(5) + shallow hole model for the Mn-0 center. The deformation potentials as well as the g values determined for the hole are in close agreement with those previously reported for the 1S(3/2)(Gamma(8)) State for shallow accepters in GaAs. All experimental results are in accordance with a J = 1 ground-state level derived from exchange coupling of the shallow 1S(3/2)(Gamma(8)) hole and the S = 5/2 Mn- core. A splitting between J = 2 and J = 1 levels in the range from 9 to 12 meV is inferred and is considerably larger than the 2-3 meV splitting previously suggested.

Place, publisher, year, edition, pages
1997. Vol. 55, 6938-6944 p.
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Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60828DOI: 10.1103/PhysRevB.55.6938OAI: diva2:481494
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M
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