Change search
ReferencesLink to record
Permanent link

Direct link
Transmission electron microscopy investigation of defects in B-implanted 6H-SiC
Industrial Microelectronics Center, Sweden.ORCID iD: 0000-0002-4148-5679
Show others and affiliations
1998 (English)In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97: Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Swedem, september 1997, Trans Tech Publications Inc., 1998, Vol. 264-2, 413-416 p.Conference paper (Refereed)
Abstract [en]

Silicon carbide is due to its wide bandgap, high saturated electron drift velocity, high electric breakdown field and high thermal conductivity a suitable material for electron devices operating at high temperatures, high powers and high frequencies.[1,2] In order for SIC to reach its full potential in device technology, doping is essential. Usually ion implantation is used for doping since diffusion is difficult in SiC. Boron is a useful material for implantation because of its low atomic weight and greater penetration depth than other accepters, yet very few studies have been conducted on B-implanted 6H-SiC. [3,4] In this investigation we have used transmission electron microscopy (TEM) to study structural defects that are found in B-implanted 6H-SiC layers.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. 264-2, 413-416 p.
, Materials Science Forum, ISSN 0255-5476 ; 264-268
Keyword [en]
Boron Implantation, Boron Precipitates, Electron Microscopy, Elemental Mapping, Planar Defects
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60825ISI: 000072751000097ScopusID: 2-s2.0-0031675516ISBN: 0-87849-790-0OAI: diva2:481500
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Stockholm, Sweden

QC 20150315

Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2015-03-13Bibliographically approved

Open Access in DiVA

No full text


Search in DiVA

By author/editor
Nordell, NilsLinnarsson, Margareta
By organisation
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 22 hits
ReferencesLink to record
Permanent link

Direct link