Transmission electron microscopy investigation of defects in B-implanted 6H-SiC
1998 (English)In: Silicon carbide, III-nitrides and related materials : ICSCIII-N'97: Proceedings of the 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Swedem, september 1997, Trans Tech Publications Inc., 1998, Vol. 264-2, 413-416 p.Conference paper (Refereed)
Silicon carbide is due to its wide bandgap, high saturated electron drift velocity, high electric breakdown field and high thermal conductivity a suitable material for electron devices operating at high temperatures, high powers and high frequencies.[1,2] In order for SIC to reach its full potential in device technology, doping is essential. Usually ion implantation is used for doping since diffusion is difficult in SiC. Boron is a useful material for implantation because of its low atomic weight and greater penetration depth than other accepters, yet very few studies have been conducted on B-implanted 6H-SiC. [3,4] In this investigation we have used transmission electron microscopy (TEM) to study structural defects that are found in B-implanted 6H-SiC layers.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 1998. Vol. 264-2, 413-416 p.
, Materials Science Forum, ISSN 0255-5476 ; 264-268
Boron Implantation, Boron Precipitates, Electron Microscopy, Elemental Mapping, Planar Defects
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60825ISI: 000072751000097ScopusID: 2-s2.0-0031675516ISBN: 0-87849-790-0OAI: oai:DiVA.org:kth-60825DiVA: diva2:481500
7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Stockholm, Sweden
QC 201503152012-01-212012-01-152015-03-13Bibliographically approved