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Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor-phase epitaxy
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1997 (English)In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 6, 1293-1296 p.Article in journal (Refereed) Published
Abstract [en]

The incorporation of hydrogen during vapor phase epitaxy was investigated using secondary ion mass spectroscopy, low temperature photoluminescence, and capacitance-voltage measurements. It was found that hydrogen incorporation is strongly dependent on the concentration of the acceptor dopants aluminum and boron, regardless of changes in the doping concentration caused by varying the concentration ratio between carbon and silicon or the dopant precursor flow. An electrical passivation of the acceptor dopants was found and could be reduced by annealing at temperatures above 1000 degrees C. At the same anneal temperature hydrogen-related photoluminescence was considerably reduced and the diffusion of hydrogen was detected. (C) 1997 Elsevier Science S.A.

Place, publisher, year, edition, pages
1997. Vol. 6, 1293-1296 p.
Keyword [en]
hydrogen incorporation; 6H-, 4H-SiC; SiC vapor phase epitaxy; Al-, B-doping
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60827DOI: 10.1016/S0925-9635(97)00106-4OAI: oai:DiVA.org:kth-60827DiVA: diva2:481502
Note

1st European Conference on Silicon Carbide and Related Materials (ECSCRM 96), IRAKLION, GREECE, OCT 06-09, 1996 NR 20140805

Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Nordell, NLinnarsson, Margareta

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