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Observation of near-surface electrically active defects in n-type 6H-SiC
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1998 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 83, 3649-3651 p.Article in journal (Refereed) Published
Abstract [en]

In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].

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1998. Vol. 83, 3649-3651 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60823DOI: 10.1063/1.367147OAI: oai:DiVA.org:kth-60823DiVA: diva2:481503
Note

NR 20140805

Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Nordell, NLinnarsson, M K

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