Observation of near-surface electrically active defects in n-type 6H-SiC
1998 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 83, 3649-3651 p.Article in journal (Refereed) Published
In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].
Place, publisher, year, edition, pages
1998. Vol. 83, 3649-3651 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60823DOI: 10.1063/1.367147OAI: oai:DiVA.org:kth-60823DiVA: diva2:481503
NR 201408052012-01-212012-01-152016-06-15Bibliographically approved