SIMS analysis of epitaxial layers for power- and micro-electronics
1998 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, Vol. 136, 1034-1039 p.Article in journal (Refereed) Published
This paper gives an overview of recent secondary ion mass spectrometry (SIMS) studies of impurities and dopants in epitaxial layers of silicon and 6H silicon carbide (SiC). Detection limits in the 10(12) cm(-3) range are demonstrated for transition metal impurities like Ti in SiC. Hydrogen is found to be mobile in SiC at temperatures in excess of 600 degrees C despite strong trapping by defects and dopant atoms, and the effective diffusion coefficient exhibits an activation energy of similar to 3.5 eV. In epitaxially grown Si layers, containing Ge delta distributions, profile broadening and shift during sputtering by Ar+ ions are accurately described by recoil mixing. For O-2(divided by) ions oxide formation and surface swelling must also be considered. Further, at elevated sample temperature Ge is found to segregate out of the SiO2 surface layer formed during oxygen bombardment, consistent with a larger heat of oxide formation for Ge than Si and a high enough mobility in SiO2. (C) 1998 Elsevier Science B.V.
Place, publisher, year, edition, pages
1998. Vol. 136, 1034-1039 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60824DOI: 10.1016/S0168-583X(97)00791-XOAI: oai:DiVA.org:kth-60824DiVA: diva2:481504
13th International Conference on Ion Beam Analysis (IBA-13), LISBON, PORTUGAL, JUL 27-AUG 01, 1997 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved