Change search
ReferencesLink to record
Permanent link

Direct link
Silicon carbide grown by liquid phase epitaxy in microgravity
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
Show others and affiliations
1998 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 13, 1812-1815 p.Article in journal (Refereed) Published
Abstract [en]

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Se solvent at 1750 degrees C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

Place, publisher, year, edition, pages
1998. Vol. 13, 1812-1815 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60822DOI: 10.1557/JMR.1998.0256OAI: diva2:481505
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Linnarsson, M K
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Journal of Materials Research
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 16 hits
ReferencesLink to record
Permanent link

Direct link