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Silicon carbide grown by liquid phase epitaxy in microgravity
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1998 (English)In: Journal of Materials Research, ISSN 0884-2914, E-ISSN 2044-5326, Vol. 13, 1812-1815 p.Article in journal (Refereed) Published
Abstract [en]

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Se solvent at 1750 degrees C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.

Place, publisher, year, edition, pages
1998. Vol. 13, 1812-1815 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60822DOI: 10.1557/JMR.1998.0256OAI: oai:DiVA.org:kth-60822DiVA: diva2:481505
Note
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Linnarsson, M K

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