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Hydrogen passivation of silicon carbide by low-energy ion implantation
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1998 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 73, 945-947 p.Article in journal (Refereed) Published
Abstract [en]

implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.

Place, publisher, year, edition, pages
1998. Vol. 73, 945-947 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60820DOI: 10.1063/1.122047OAI: oai:DiVA.org:kth-60820DiVA: diva2:481506
Note
NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Linnarsson, M K

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