Hydrogen passivation of silicon carbide by low-energy ion implantation
1998 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 73, 945-947 p.Article in journal (Refereed) Published
implantation of deuterium is performed to investigate the mobility and passivating effect of hydrogen in epitaxial alpha-SiC (polytypes 4H and 6H). To avoid excessive damage and the resulting trapping of hydrogen, the implantation is performed with low energy (600 eV H-2(2)+). The H-2 depth profile is analyzed by secondary ion mass spectrometry. Electrical properties are measured by capacitance-voltage profiling and admittance spectroscopy. In p-type SIG, hydrogen diffuses on a mu m scale even at room temperature and effectively passivates accepters. In n-type SiC, the incorporation of H is suppressed and no passivation is detected. (C) 1998 American Institute of Physics.
Place, publisher, year, edition, pages
1998. Vol. 73, 945-947 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60820DOI: 10.1063/1.122047OAI: oai:DiVA.org:kth-60820DiVA: diva2:481506
NR 201408052012-01-212012-01-152012-01-21Bibliographically approved