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Ultra-shallow thermal donor formation in oxygen-containing ambient
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1998 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, 527-532 p.Article in journal (Refereed) Published
Abstract [en]

Czochralski-grown phosphorus-doped (approximate to 2 x 10(14) cm(-3)) silicon wafers have been annealed in nitrogen, wet nitrogen, argon, oxygen, and vacuum ambients at 470 degrees C for times up to 500 h. Sample characterization was made with capacitance-voltage, four-point probe, DLTS, thermally stimulated capacitance, admittance spectroscopy, secondary ion-mass spectrometry, and Fourier transform infrared spectroscopy. This study finds a strong relation between the previously reported ultra-shallow thermal donors (USTDs) and shallow thermal donors (STDs), and it is shown that the net concentration of thermally formed donors is independent on annealing ambient within the experimental accuracy. It was found that the majority of formed donors for long anneals consisted of either STDs or USTDs, however, it was found that oxygen-containing ambient is indispensable for forming USTDs.

Place, publisher, year, edition, pages
1998. Vol. 210, 527-532 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60819DOI: 10.1002/(SICI)1521-3951(199812)210:2<527::AID-PSSB527>3.0.CO;2-LOAI: oai:DiVA.org:kth-60819DiVA: diva2:481509
Note
8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*), MONTPELLIER, FRANCE, JUL 27-30, 1998 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Linnarsson, M K

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