Mobility passivating effect and thermal stability of hydrogen in silicon carbide
1998 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, 395-399 p.Article in journal (Refereed) Published
The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.
Place, publisher, year, edition, pages
1998. Vol. 210, 395-399 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60818DOI: 10.1002/(SICI)1521-3951(199812)210:2<395::AID-PSSB395>3.0.CO;2-9OAI: oai:DiVA.org:kth-60818DiVA: diva2:481510
8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*), MONTPELLIER, FRANCE, JUL 27-30, 1998 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved