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Mobility passivating effect and thermal stability of hydrogen in silicon carbide
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1998 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, 395-399 p.Article in journal (Refereed) Published
Abstract [en]

The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.

Place, publisher, year, edition, pages
1998. Vol. 210, 395-399 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-60818DOI: 10.1002/(SICI)1521-3951(199812)210:2<395::AID-PSSB395>3.0.CO;2-9OAI: oai:DiVA.org:kth-60818DiVA: diva2:481510
Note
8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*), MONTPELLIER, FRANCE, JUL 27-30, 1998 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

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Linnarsson, M K

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