Change search
ReferencesLink to record
Permanent link

Direct link
Mobility passivating effect and thermal stability of hydrogen in silicon carbide
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
Show others and affiliations
1998 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 210, 395-399 p.Article in journal (Refereed) Published
Abstract [en]

The diffusion and passivating effect of hydrogen (isotope H-2) in epitaxial p-type SiC is studied by secondary ion mass spectrometry and capacitance-voltage profiling on Schottky diodes. The incorporation of hydrogen is achieved by low-energy ion implantation. The influence of implantation energy, temperature and subsequent annealing is presented. Annealing experiments with an electric field applied reveal a reactivation of passivated accepters and a H+ ion drift at a surprisingly low temperature of 530 K.

Place, publisher, year, edition, pages
1998. Vol. 210, 395-399 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60818DOI: 10.1002/(SICI)1521-3951(199812)210:2<395::AID-PSSB395>3.0.CO;2-9OAI: diva2:481510
8th International Conference on Shallow-Level Centres in Semiconductors (SLCS-(*), MONTPELLIER, FRANCE, JUL 27-30, 1998 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Linnarsson, M K
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Physica status solidi. B, Basic research
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 49 hits
ReferencesLink to record
Permanent link

Direct link