Channeling implantations of Al+ into 6H silicon carbide
1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 74, 3990-3992 p.Article in journal (Refereed) Published
A strong channeling effect of Al+ ions implanted into crystalline SiC has been observed by Monte Carlo simulations and experiments especially designed to demonstrate this phenomenon have been performed. Depth distributions of implanted Al were measured for on- and controlled off-axis Al implantations using secondary ion mass spectrometry (SIMS). Much deeper and wider profiles are obtained for the on-axis implantations as compared to off-axis implants. For higher doses, the experiment also reveals the growth of an intermediate peak slightly deeper than the random peak. The origin of the intermediate peak can be understood by combining SIMS results with Monte Carlo simulations, which motivates the development of advanced simulation tools for the ion implantation process in SiC. (C) 1999 American Institute of Physics. [S0003-6951(99)01426-6].
Place, publisher, year, edition, pages
1999. Vol. 74, 3990-3992 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60816DOI: 10.1063/1.124246OAI: oai:DiVA.org:kth-60816DiVA: diva2:481512
NR 201408052012-01-212012-01-152012-01-21Bibliographically approved