Diffusion of light elements in 4H-and 6H-SiC
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-2, 275-280 p.Article in journal (Refereed) Published
Deuterium and lithium were introduced in p-type SiC by implantation of 20 keV H-2(+) or 30 keV Li-7(+) ions in order to form a diffusion source. The samples were subsequently annealed in vacuum in the temperature range 400-700 degrees C for 0.25 to 16 h. Secondary ion mass spectrometry (SIMS) was used to measure the deuterium and the lithium distribution after heat treatments. Both deuterium and lithium readily decorate the bombardment-induced defects in the vicinity of the ion implantation profile and they are also trapped, most likely by residual boron impurities, during diffusion into the bulk. An effective diffusion coefficient, reflecting the dissociation of trapped lithium, with an activation energy of 2.1 eV is extracted for lithium diffusion in p-type 6H SIG. Furthermore, a capture radius for trapping (most likely by boron) of deuterium is estimated as 10 Angstrom. (C) 1999 Elsevier Science S.A. All rights reserved.
Place, publisher, year, edition, pages
1999. Vol. 61-2, 275-280 p.
diffusion; deuterium; lithium; secondary ion mass spectrometry; silicon carbide
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60814DOI: 10.1016/S0921-5107(98)00517-0OAI: oai:DiVA.org:kth-60814DiVA: diva2:481514
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), MONTPELLIER, FRANCE, SEP 02-04, 1998 NR 201408052012-01-212012-01-152016-06-15Bibliographically approved