Hall effect investigations of 4H-SiC epitaxial layers grown on semi-insulating and conducting substrates
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-2, 389-394 p.Article in journal (Refereed) Published
Nitrogen- and aluminum-doped 4H silicon carbide epitaxial layers were grown simultaneously on semi-insulating and conducting substrates. The layers were investigated by conventional van der Pauw Hall effect measurements and for comparison also with secondary ion mass spectrometry and capacitance voltage measurements. It was found, that the carrier concentration in the layers grown on conducting substrates were overestimated by the Hall effect measurement, which leads to an underestimation of the ionization energy of the main dopant, as compared to the layer grown on semi-insulating substrates. The difference can be explained by a two-layer Hall effect model. (C) 1999 Elsevier Science S.A. All rights reserved.
Place, publisher, year, edition, pages
1999. Vol. 61-2, 389-394 p.
epitaxial growth; hall effect; 4H silicon carbide; semi-insulating substrate; two layer Hall effect model
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60815DOI: 10.1016/S0921-5107(98)00540-6OAI: oai:DiVA.org:kth-60815DiVA: diva2:481515
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), MONTPELLIER, FRANCE, SEP 02-04, 1998 NR 201408052012-01-212012-01-152016-06-15Bibliographically approved