Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 61-2, 151-154 p.Article in journal (Refereed) Published
Experimental results are presented for residual nitrogen incorporation in both Si and C face 4H SiC epilayers using the high temperature chemical vapor deposition (HTCVD) process in a chimney reactor. The influence of total pressure, process temperature and input C/Si ratio on the residual nitrogen doping is studied. The results are further confirmed by intentional nitrogen doping experiments. Activation energies of 200 kcal/mol for Si face and 108 kcal/mol for C face samples are obtained for nitrogen incorporation. Possible incorporation mechanisms related to both surface and gas phase kinetics are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.
Place, publisher, year, edition, pages
1999. Vol. 61-2, 151-154 p.
C/Si ratio; HTCVD; nitrogen doping; pressure; SiC; temperature
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60813DOI: 10.1016/S0921-5107(98)00490-5OAI: oai:DiVA.org:kth-60813DiVA: diva2:481516
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), MONTPELLIER, FRANCE, SEP 02-04, 1998 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved