Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
Show others and affiliations
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-2, 151-154 p.Article in journal (Refereed) Published
Abstract [en]

Experimental results are presented for residual nitrogen incorporation in both Si and C face 4H SiC epilayers using the high temperature chemical vapor deposition (HTCVD) process in a chimney reactor. The influence of total pressure, process temperature and input C/Si ratio on the residual nitrogen doping is studied. The results are further confirmed by intentional nitrogen doping experiments. Activation energies of 200 kcal/mol for Si face and 108 kcal/mol for C face samples are obtained for nitrogen incorporation. Possible incorporation mechanisms related to both surface and gas phase kinetics are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

Place, publisher, year, edition, pages
1999. Vol. 61-2, 151-154 p.
Keyword [en]
C/Si ratio; HTCVD; nitrogen doping; pressure; SiC; temperature
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60813DOI: 10.1016/S0921-5107(98)00490-5OAI: oai:DiVA.org:kth-60813DiVA: diva2:481516
Note
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), MONTPELLIER, FRANCE, SEP 02-04, 1998 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2017-12-08Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Linnarsson, M K

Search in DiVA

By author/editor
Linnarsson, M K
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Materials Science & Engineering: B. Solid-state Materials for Advanced Technology
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 57 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf