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Epitaxial growth of SiC in a new multi-wafer VPE reactor
Industrial Microelectronic Center (IMC), Sweden.ORCID iD: 0000-0002-4148-5679
KTH. (Solid State Electronics)ORCID iD: 0000-0002-0292-224X
1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 61-62, 143-146 p.Article in journal (Refereed) Published
Abstract [en]

SiC epitaxial layers have been grown in a commercial multi-wafer reactor. Results from the initial growth runs are presented. The reactor is vertical and has a high speed rotating susceptor that can support up to six 50 mm diameter wafers. The surface morphology of the grown layers are specular and show no indication of step-bunching. The unintentional background doping is p-type in the low 10(15) cm(-3) range, consisting mainly of Al. Both N and Al have been used for doped layers showing wide doping range capability and sharp transients. The best uniformity in thickness and doping achieved so far on the same 35 mm wafer are +/- 7% and +/- 10%, respectively. (C) 1999 Elsevier Science S.A. All rights reserved.

Place, publisher, year, edition, pages
1999. Vol. 61-62, 143-146 p.
Keyword [en]
CVD, multi-wafer reactor, vapor phase epitaxy
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60812DOI: 10.1016/S0921-5107(98)00488-7ISI: 000082234800028OAI: diva2:481517
2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98), Montpellier, France, SEP 02-04, 1998 NR 20140805

QC 20150625

Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2015-06-25Bibliographically approved

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Nordell, NilsLinnarsson, Margareta
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