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Formation of passivated layers in p-type SiC by low energy ion implantation of hydrogen
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 933-936 p.Conference paper, Published paper (Refereed)
Abstract [en]

The mobility of hydrogen and its passivating effect on accepters in p-type SiC is investigated. Hydrogen (isotope H-1 or H-2 alternatively) is implanted at temperatures between 300 K and 680 K with low energy (300 eV per atom) in order to minimize implantation damage. The depth profiles of 2H and of passivated accepters correspond closely. Up to 500 K, a fully passivated layer with a well defined thickness is formed. Its depth ton the order of 1 micrometer) is investigated as a function of doping level and hydrogen fluence. At higher temperatures, the incorporation drastically increases, but the electrical passivation is partial only. Qualitative explanations are given.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 933-936 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
acceptor; diffusion; hydrogen; implantation; passivation; resistivity
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60810OAI: oai:DiVA.org:kth-60810DiVA: diva2:481519
Note
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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