Change search
ReferencesLink to record
Permanent link

Direct link
Damage reduction in channeled ion implanted 6H-SiC
Show others and affiliations
2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 893-896 p.Conference paper (Refereed)
Abstract [en]

We compare damage effects of “random” (off-axis) and [0001] aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below similar to 5x10(14) cm(-2), the integral damage is reduced by a factor of similar to2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 893-896 p.
Keyword [en]
channeling; damage; ion implantation; Raman; SIMS; simulation
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60809OAI: diva2:481520
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Linnarsson, M
By organisation
School of Information and Communication Technology (ICT)
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 6 hits
ReferencesLink to record
Permanent link

Direct link