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Damage reduction in channeled ion implanted 6H-SiC
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2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 893-896 p.Conference paper, Published paper (Refereed)
Abstract [en]

We compare damage effects of “random” (off-axis) and [0001] aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below similar to 5x10(14) cm(-2), the integral damage is reduced by a factor of similar to2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 893-896 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
channeling; damage; ion implantation; Raman; SIMS; simulation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60809OAI: oai:DiVA.org:kth-60809DiVA: diva2:481520
Note
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M

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School of Information and Communication Technology (ICT)
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