Damage reduction in channeled ion implanted 6H-SiC
2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 893-896 p.Conference paper (Refereed)
We compare damage effects of “random” (off-axis) and  aligned implants of 1.5 MeV Al into 6H-SiC. Both channeled and random equivalent SIMS profiles have been used to adjust model parameters of the simulator. Depth resolved Raman measurements show that at ion doses below similar to 5x10(14) cm(-2), the integral damage is reduced by a factor of similar to2.5 for the channeled implant. This confirms the corresponding reduction of defect concentrations predicted by simulations.
Place, publisher, year, edition, pages
2000. Vol. 338-3, 893-896 p.
, MATERIALS SCIENCE FORUM
channeling; damage; ion implantation; Raman; SIMS; simulation
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60809OAI: oai:DiVA.org:kth-60809DiVA: diva2:481520
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved