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Photoluminescence study of CVD layers highly doped with nitrogen
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 619-622 p.Conference paper, Published paper (Refereed)
Abstract [en]

From a systematic study of highly doped n-type 4H-SiC epilayers we observe a photoluminescence spectrum, which was previously associated with the recombination of a bound exciton at the neutral boron acceptor. Electrical measurements performed on these layers show clearly n-type conductivity. It was feasible to dope and measure reproducibly the layers from low 10(17) to mid 10(18) cm(-3). It was not possible to determine the doping from Capacitance Voltage measurements for the samples grown with the highest doping (>6.10(18) cm(-3)). However Secondary Ion Mass spectrometry did not reveal any boron impurities in the layers and shows good agreement with electrical measurements regarding the nitrogen concentration.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 619-622 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
Mott transition; n-type doping; photoluminescence
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60807OAI: oai:DiVA.org:kth-60807DiVA: diva2:481522
Note
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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