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High growth rate epitaxy of thick 4H-SiC layers
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2000 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, Vol. 338-3, 165-168 p.Conference paper (Refereed)
Abstract [en]

Sublimation epitaxy for fabrication of thick 4H-SiC layers has been studied with respect to surface morphology, structural quality, and purity. The surface morphology of thick (50-100 mum) epilayers is smooth, even though the growth rate was 100 mum/h. These surfaces are obtained within a parameter window for morphological stability. The structural perfection is confirmed by high-resolution X-Ray diffraction measurements and the epilayer quality is improved compared with the substrate. The limitation in purity is dependent mainly on the purity of the SiC source material. The growth system purity, mainly graphite and Ta parts of the growth crucible, is also of major importance. Results from intentional doping for high-resistive, semi-insulating and p-type material are presented.

Place, publisher, year, edition, pages
2000. Vol. 338-3, 165-168 p.
Keyword [en]
doping; epitaxy; purity; semi-insulating
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60806OAI: diva2:481524
International Conference on Silicon Carbide and Related Materials, RES TRIANGLE PK, NORTH CAROLINA, OCT 10-15, 1999 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K
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School of Information and Communication Technology (ICT)
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