Growth of delta-doped SiC epitaxial layers
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 563-566 p.Conference paper (Refereed)
N- and p-type delta -doped SiC epitaxial layers have been grown by vapour phase epitaxy and characterised by SIMS and CV measurements. Different techniques of achieving delta -doped layers are examined. Doping profiles with FWHM from 1 to 10nm have been obtained at different peak concentrations.
Place, publisher, year, edition, pages
2001. Vol. 353-356, 563-566 p.
, Materials Science Forum
delta-doping; vapor phase epitaxy
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60805OAI: oai:DiVA.org:kth-60805DiVA: diva2:481525
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved