Change search
ReferencesLink to record
Permanent link

Direct link
Techniques for depth profiling of dopants in 4H-SiC
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
Show others and affiliations
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 559-562 p.Conference paper (Refereed)
Abstract [en]

Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 559-562 p.
, Materials Science Forum
Keyword [en]
dopant activation; dopant profile; scanning capacitance microscopy (SCM); SEM; Spreading Resistance profiling (SRP)
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-60804OAI: diva2:481526
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Linnarsson, M K
By organisation
School of Information and Communication Technology (ICT)
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 29 hits
ReferencesLink to record
Permanent link

Direct link