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Techniques for depth profiling of dopants in 4H-SiC
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 559-562 p.Conference paper, Published paper (Refereed)
Abstract [en]

Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 559-562 p.
Series
Materials Science Forum
Keyword [en]
dopant activation; dopant profile; scanning capacitance microscopy (SCM); SEM; Spreading Resistance profiling (SRP)
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60804OAI: oai:DiVA.org:kth-60804DiVA: diva2:481526
Note
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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