Techniques for depth profiling of dopants in 4H-SiC
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 559-562 p.Conference paper (Refereed)
Three different methods for measuring the depth distribution of dopants in 4H-SiC have been investigated: (I) Spreading Resistance profiling (SRP), (2) Scanning Capacitance Microscopy (SCM) and (3) Scanning Electron Microscopy (SEM). The investigated samples included p- and n-type epitaxial layers grown by vapor phase deposition with doping concentrations of 10(16)-10(20) cm(-3). Also p(+)n implanted profiles using a combination of Al and B multi-energy implantations were studied. All techniques were able to provide doping profiles qualitatively corresponding to secondary ion mass spectrometry (SIMS) data. The SRP results suggest a lower limit of the p-doping concentration below which the ohmic contact between the probe tip and sample becomes more Schottky-like. The magnitude of the SCM signal corresponds well to the chemical doping profile except in the depleted region surrounding the metallurgical junction of the p(+)n structure.
Place, publisher, year, edition, pages
2001. Vol. 353-356, 559-562 p.
, Materials Science Forum
dopant activation; dopant profile; scanning capacitance microscopy (SCM); SEM; Spreading Resistance profiling (SRP)
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60804OAI: oai:DiVA.org:kth-60804DiVA: diva2:481526
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP , 2000 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved