Presence of hydrogen in SiC
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 373-376 p.Conference paper (Refereed)
An unexpected presence of hydrogen in 4H-SiC was revealed by the observation of hydrogen related lines in the low-temperature photoluminescence (LTPL) spectrum after secondary ion mass spectrometry (SIMS) measurements. The lines were not observed before SIMS. The high-energy ions during SIMS are proposed to break the boron-hydrogen bonds. This phenomenon is observable only for a certain impurity concentration in the material due to the competition of various recombination channels during the LTPL experiment.
Place, publisher, year, edition, pages
2001. Vol. 353-356, 373-376 p.
, Materials Science Forum
boron; hydrogen; photoluminescence; SIMS
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60800OAI: oai:DiVA.org:kth-60800DiVA: diva2:481527
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP, 2000 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved