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Presence of hydrogen in SiC
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 373-376 p.Conference paper, Published paper (Refereed)
Abstract [en]

An unexpected presence of hydrogen in 4H-SiC was revealed by the observation of hydrogen related lines in the low-temperature photoluminescence (LTPL) spectrum after secondary ion mass spectrometry (SIMS) measurements. The lines were not observed before SIMS. The high-energy ions during SIMS are proposed to break the boron-hydrogen bonds. This phenomenon is observable only for a certain impurity concentration in the material due to the competition of various recombination channels during the LTPL experiment.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 373-376 p.
Series
Materials Science Forum
Keyword [en]
boron; hydrogen; photoluminescence; SIMS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60800OAI: oai:DiVA.org:kth-60800DiVA: diva2:481527
Note
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP, 2000 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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