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Precipitate formation in heavily Al-doped 4H-SiC layers
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 583-586 p.Conference paper, Published paper (Refereed)
Abstract [en]

Epitaxially grown 4H-SiC structures with several heavily Al doped layers were used. The samples were annealed in Ar atmosphere in a RF-heated furnace between 1500 and 2900 degreesC for 0.5 to 3h. Secondary ion mass spectrometry (SIMS) was used to measure the aluminum concentration versus;depth as well as the lateral distribution (ion images). Transmission electron microscopy (TEM) was employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of 2x10(20) Al/cm(3) at 2000 degreesC is extracted. Ion images of the lateral Al distribution reveal a pronounced dependence on the Al content. Precipitate formation occurs after heat treatment at 1700 - 2000 degreesC when the Al concentration exceeds 2x10(20) cm(-3) and energy-filtered TEM (EFTEM) shows that the precipitates contain Al.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 583-586 p.
Series
Materials Science Forum
Keyword [en]
aluminium; precipitate; SIMS; solubility limit; TEM
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60802OAI: oai:DiVA.org:kth-60802DiVA: diva2:481530
Note
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP, 2000 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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