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Doping of silicon carbide by ion implantation
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 549-554 p.Conference paper, Published paper (Refereed)
Abstract [en]

A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.

Place, publisher, year, edition, pages
2001. Vol. 353-356, 549-554 p.
Series
Materials Science Forum
Keyword [en]
defect recombination; dopant activation; dopant compensation; interstitial clusters; Ostwald ripening; transient enhanced diffusion
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-60801OAI: oai:DiVA.org:kth-60801DiVA: diva2:481531
Note
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP, 2000 NR 20140805Available from: 2012-01-21 Created: 2012-01-15 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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