Doping of silicon carbide by ion implantation
2001 (English)In: SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, Vol. 353-356, 549-554 p.Conference paper (Refereed)
A brief survey is given of some recent results on doping of 4H- and 6H-SiC by ion implantation. The doses and energies used are between 10(9) and 10(15) cm(-2) and 100 keV and 5 MeV, respectively, and B and Al ions (p-type dopants) are predominantly studied. After low dose implantation (less than or equal to 10(10) cm(-2)) a strong compensation is observed in n-type samples and this holds irrespective of implantation temperature up to 600 degreesC. However, at higher doses (10(14)-10(15) Al/cm(2)) the rate of defect recombination (annihilation) increases substantially during hot implants (greater than or equal to 200 degreesC) and in these samples one type of structural defect dominates after past-implant annealing at 1700-2000 degreesC. The defect is identified as a dislocation loop composed of clustered interstitial atoms inserted on the basal plane in the hexagonal crystal structure. Finally, transient enhanced diffusion (TED) of ion-implanted boron in 4H-samples is discussed.
Place, publisher, year, edition, pages
2001. Vol. 353-356, 549-554 p.
, Materials Science Forum
defect recombination; dopant activation; dopant compensation; interstitial clusters; Ostwald ripening; transient enhanced diffusion
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-60801OAI: oai:DiVA.org:kth-60801DiVA: diva2:481531
3rd European Conference on Silicon Carbide and Related Materials, KLOSTER BANZ, GERMANY, SEP, 2000 NR 201408052012-01-212012-01-152012-01-21Bibliographically approved