Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, Vol. 433-4, 423-426 p.Conference paper (Refereed)
Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.
Place, publisher, year, edition, pages
2002. Vol. 433-4, 423-426 p.
, MATERIALS SCIENCE FORUM
boron; DLTS; hydrogen; MCTS; photoluminescence; SIMS
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-63025OAI: oai:DiVA.org:kth-63025DiVA: diva2:481532
4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), LINKOPING, SWEDEN, SEP 02-25, 2002 NR 201408052012-01-212012-01-212012-01-21Bibliographically approved