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Correlation between electrical and optical mapping of boron related complexes in 4H-SiC
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, Vol. 433-4, 423-426 p.Conference paper, Published paper (Refereed)
Abstract [en]

Boron related photoluminescence (PL) and capacitance transient spectroscopy (DLTS and MCTS) peaks have been investigated around SIMS craters. Enhancement of boron and hydrogen related PL was observed in the vicinity of the crater, whereas the concentration of electrically active boron as measured by MCTS has decreased considerably. Comparison of the boron MCTS peak behavior after electron and proton irradiation is presented. Possible defect models based on the obtained results are discussed.

Place, publisher, year, edition, pages
2002. Vol. 433-4, 423-426 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
boron; DLTS; hydrogen; MCTS; photoluminescence; SIMS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63025OAI: oai:DiVA.org:kth-63025DiVA: diva2:481532
Note
4th Euopean Conference on Silicon Carbide and Related Materials (ECSCRM 2002), LINKOPING, SWEDEN, SEP 02-25, 2002 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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