Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, 203-206 p.Conference paper (Refereed)
Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 203-206 p.
, MATERIALS SCIENCE FORUM
aluminum; CVD; doping; hot-wall; thermodynamical calculations
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-63021OAI: oai:DiVA.org:kth-63021DiVA: diva2:481534
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 201408052012-01-212012-01-212012-01-21Bibliographically approved