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Aluminum doping of epitaxial silicon carbide grown by hot-wall CVD; Effect of process parameters
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, 203-206 p.Conference paper, Published paper (Refereed)
Abstract [en]

Intentional p-type doping of SiC has been performed by using trimethylaluminum as dopant source. A comprehensive investigation of the aluminum incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor has been made. The incorporation mechanism for 4H and 6H-SiC both for Si- and C-face material is presented.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 203-206 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
aluminum; CVD; doping; hot-wall; thermodynamical calculations
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63021OAI: oai:DiVA.org:kth-63021DiVA: diva2:481534
Note
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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