Range distributions of implanted ions in silicon carbide
2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, 779-782 p.Conference paper (Refereed)
The first four distribution moments (R-P, DeltaR(p), gamma and beta) of 113 experimental single energy ion implantations into silicon carbide (SiC) have been assembled to form the base for an empirical ion implantation simulator using Pearson frequency functions. The studied ions are H-1, H-2, Li-7, B-11, N-14, O-11, Al-27, P-31, and As-75, and the implantation energies range from 0.5 keV to 4 MeV. Thirty-nine of these implantations have been implanted, measured, and analyzed in the present study while the remaining implantation data were gathered from the literature. Furthermore, 16 additional implantations were simulated - using a new Binary Collision Approximation (BCA) code for crystalline materials - to fill up the missing energies for ions with limited experimental data. The extracted range data are presented as tabulated fitting constants to analytical functions of the distribution moments versus implantation energy.
Place, publisher, year, edition, pages
2002. Vol. 389-3, 779-782 p.
, MATERIALS SCIENCE FORUM
distribution moments; ion implantation; SIMS; simulation
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-63024OAI: oai:DiVA.org:kth-63024DiVA: diva2:481535
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 201408052012-01-212012-01-212012-01-21Bibliographically approved