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Range distributions of implanted ions in silicon carbide
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, 779-782 p.Conference paper, Published paper (Refereed)
Abstract [en]

The first four distribution moments (R-P, DeltaR(p), gamma and beta) of 113 experimental single energy ion implantations into silicon carbide (SiC) have been assembled to form the base for an empirical ion implantation simulator using Pearson frequency functions. The studied ions are H-1, H-2, Li-7, B-11, N-14, O-11, Al-27, P-31, and As-75, and the implantation energies range from 0.5 keV to 4 MeV. Thirty-nine of these implantations have been implanted, measured, and analyzed in the present study while the remaining implantation data were gathered from the literature. Furthermore, 16 additional implantations were simulated - using a new Binary Collision Approximation (BCA) code for crystalline materials - to fill up the missing energies for ions with limited experimental data. The extracted range data are presented as tabulated fitting constants to analytical functions of the distribution moments versus implantation energy.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 779-782 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
distribution moments; ion implantation; SIMS; simulation
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63024OAI: oai:DiVA.org:kth-63024DiVA: diva2:481535
Note
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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