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Incorporation of hydrogen (H-1 and H-2) into 4H-SiC during epitaxial growth
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2002 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, Vol. 389-3, 565-568 p.Conference paper, Published paper (Refereed)
Abstract [en]

The hydrogen depth distribution in 4H-SiC after epitaxial growth at 1600 degreesC has been studied in detail with secondary ion mass spectrometry. Both H-1 and H-2 have been employed as carrier gas to trace the origin of the incorporated hydrogen. In particular the substrate as a prospective hydrogen source has been considered. After growth H-2 is detected throughout the whole substrate (similar to400 mum) and a considerable quantity remains after annealing at 1500 degreesC for 15 minutes.

Place, publisher, year, edition, pages
2002. Vol. 389-3, 565-568 p.
Series
MATERIALS SCIENCE FORUM
Keyword [en]
CVD; deuterium; hydrogen; SIMS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63022OAI: oai:DiVA.org:kth-63022DiVA: diva2:481536
Note
International Conference on Silicon Carbide and Related Materials, TSUKUBA, JAPAN, OCT 28-NOV 02, 2001 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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