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Implanted p(+)n-junctions in silicon carbide
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2003 (English)In: APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2003, Vol. 680, 653-657 p.Conference paper, Published paper (Refereed)
Abstract [en]

Ion implantation is considered a key technology for the realisation of silicon carbide electronic devices. Here we will give an overview of the field and present some recent results of ion implanted 4H SiC epitaxial layers. Mainly Al ions of keV energies have been used at different fluence, flux and target temperature. The samples have been investigated by secondary ion mass spectrometry (SIMS), channeling Rutherford backscattering (RBS-c) and transmission electron microscopy (TEM), both as-implanted and after annealing up to 1900 degreesC. Also the electrical activation of Al-implanted and annealed material has been investigated by scanning spreading resistance microscopy (SSRM). The damage accumulation, monitored by RBS-c, is linear with ion fluence but depends strongly on implantation temperature and ion flux. Annealing at temperatures above 1700 degreesC is needed to remove the damage and to electrically activate implanted Al ions. At these high annealing temperatures, however, dislocation loops are formed that have a negative influence on device performance.

Place, publisher, year, edition, pages
2003. Vol. 680, 653-657 p.
Series
AIP CONFERENCE PROCEEDINGS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63019OAI: oai:DiVA.org:kth-63019DiVA: diva2:481538
Note
17th International Conference on the Application of Accelerators in Research and Industry, UNIV N TEXAS, DENTON, TX, NOV 12-16, 2002 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M

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School of Information and Communication Technology (ICT)
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