Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
2005 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 72, 254-257 p.Article in journal (Refereed) Published
A complete calibration of nitrogen concentration in doped 4H-SiC material is presented. This is done in the very large range of doping available today. i.e. from low 10(14) to 10(19) cm(-3). The samples are 4H-SiC films fabricated by hot-wall chemical vapour deposition. Low temperature photoluminescence is used as the experimental tool. For doping concentrations less than 8. 10(17) cm(-3), comparison between the intensity of various luminescence lines is used. whereas for doping hi,,her than 3 - 10(18) cm(-3) the energy position of an observed broad band allows the determination of the doping level.
Place, publisher, year, edition, pages
2005. Vol. 72, 254-257 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-63017DOI: 10.1238/Physica.Regular.072a00254ScopusID: 2-s2.0-23444440150OAI: oai:DiVA.org:kth-63017DiVA: diva2:481539
QC 201201232012-01-212012-01-212012-01-23Bibliographically approved