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Determination of nitrogen doping concentration in doped 4H-SiC epilayers by low temperature photoluminescence
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
2005 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. 72, 254-257 p.Article in journal (Refereed) Published
Abstract [en]

A complete calibration of nitrogen concentration in doped 4H-SiC material is presented. This is done in the very large range of doping available today. i.e. from low 10(14) to 10(19) cm(-3). The samples are 4H-SiC films fabricated by hot-wall chemical vapour deposition. Low temperature photoluminescence is used as the experimental tool. For doping concentrations less than 8. 10(17) cm(-3), comparison between the intensity of various luminescence lines is used. whereas for doping hi,,her than 3 - 10(18) cm(-3) the energy position of an observed broad band allows the determination of the doping level.

Place, publisher, year, edition, pages
2005. Vol. 72, 254-257 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63017DOI: 10.1238/Physica.Regular.072a00254Scopus ID: 2-s2.0-23444440150OAI: oai:DiVA.org:kth-63017DiVA: diva2:481539
Note
QC 20120123Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2017-12-08Bibliographically approved

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Linnarsson, Margareta

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