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Aluminum and boron diffusion in 4H-SiC
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
2003 (English)In: SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, Vol. 742, 291-301 p.Conference paper, Published paper (Refereed)
Abstract [en]

A brief survey is given of some recent result of boron diffusion in low doped n-type (intrinsic) and p-type 4H-SiC. Aluminum diffusion and solubility limit in 4H-SiC are also discussed. Ion implantation of boron has been performed in epitaxial material to form a diffusion source but also epitaxial 4H-SiC structures, with heavily boron or aluminum doped layers prepared by vapor phase epitaxy have been studied. Heat treatments have been made at temperatures ranging from 1100 to 2050degreesC for 5 minutes up to 64 h. Secondary ion mass spectrometry has been utilized for analysis. For boron diffusion in acceptor doped 4H-SiC, 4x10(19) Al atoms/cm(3), an activation energy of 5.3 eV has been determined and a strong dependence on Al content for the diffusion coefficient is revealed. Transient enhanced diffusion of ion-implanted boron in intrinsic 4H-SiC samples is discussed. Solubility limits of similar to1x10(20) Al/cm(3) (1700degreesC) and <1x10(20) B/cm(3) (1900degreesC) have been deduced.

Place, publisher, year, edition, pages
2003. Vol. 742, 291-301 p.
Series
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63018OAI: oai:DiVA.org:kth-63018DiVA: diva2:481540
Note
Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2002 MRS Fall Meeting, BOSTON, MA, DEC 02-04, 2002 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M K

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CiteExportLink to record
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