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Diffusion of phosphorus in strained Si/SiGe/Si heterostructures
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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1999 (English)In: Materials Research Society Symposium - Proceedings, Vol. 568, no Warrendale, PA, United States, 271-276 p.Article in journal (Refereed) Published
Abstract [en]

Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810-900 °C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.

Place, publisher, year, edition, pages
San Francisco, CA, USA, 1999. Vol. 568, no Warrendale, PA, United States, 271-276 p.
Keyword [en]
Diffusion in solids, Oxidation, Phosphorus, Semiconducting boron, Semiconducting films, Semiconducting silicon, Semiconducting silicon compounds, Interstitial fraction, Pairing-controlled mechanisms, Heterojunctions
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63034OAI: oai:DiVA.org:kth-63034DiVA: diva2:481546
Note
References: Harame, D.L., Comfort, J.H., Cressler, J.D., Crabbé, E.F., Sun, J.Y.-C., Meyerson, B.S., Tice, T., (1995) IEEE Trans.ED, 42, p. 455; Cowern, N.E.B., Zalm, P.C., Gravesteijn, D.J., De Boer, W.B., (1994) Phys.Rev.Lett., 72, p. 2585; Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E., Lefforge, D., (1995) Appl.Phys.Lett., 66, p. 580; KringhÞj, P., Nylandsted Larsen, A., Shirayev, S.Yu., (1996) Phys.Rev.Lett, 76, p. 3372; Kuznetsov, A.Yu., Cardenas, J., Svensson, B.G., Lundsgaard Hansen, J., Nylandsted Larsen, A., (1999) Phys. Rev. B., 59, p. 7274; Hu, S.M., Ahlgren, D.C., Ronsheim, P.A., Chu, J.O., (1991) Phys.Rev.Lett., 67, p. 1450; Aziz, M.J., (1997) Appl. Phys. Lett., 70, p. 2810; Kuznetsov, A.Yu., Cardenas, J., Grahn, J., Svensson, B.G., Lundsgaard Hansen, J., Nylandsted Larsen, A., (1998) Phys. Rev. B., 58, pp. R13355; Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E., Lefforge, D., (1995) Appl.Phys.Lett., 67, p. 706; Kuo, P., Hoyt, J.L., Gibbson, J.F., Turner, J.E., Lefforge, D., (1995) Mat.Res.Soc.Symp.Proc., 379, p. 373; Fahey, P.M., Griffin, P.B., Plummér, J.D., (1989) Rev.Mod.Phys., 61, p. 289; Hu, S.M., (1974) J.Appl.Phys., 45, p. 1567; Dunlap Jr., W.C., (1954) Phys.Rev., 94, p. 1531; Zhao, Y., Aziz, M.J., Gossmann, H.-J., Mitha, S., Schiferl, D., (1999) Appl.Phys.Lett., 74, p. 31 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M. K.

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