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Influence of growth parameters on the nitrogen incorporation in 4H- And 6H-SiC epilayers grown by hot-wall chemical vapour deposition
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: Materials Research Society Symposium Proceedings, San Francisco, CA, 2001, Vol. 680, 73-78 p.Conference paper, Published paper (Refereed)
Abstract [en]

We have investigated the nitrogen incorporation dependency on temperature, pressure, C/Si ratio and growth rate in a horizontal hot-wall CVD reactor. The incorporation mechanism for 4H- and 6H-SiC both for Si- and C-face material is presented. A comparison with previously published results in a cold-wall reactor is also made. © 2001 Materials Research Society.

Place, publisher, year, edition, pages
San Francisco, CA, 2001. Vol. 680, 73-78 p.
Series
2001 MRS Spring Meeting
Keyword [en]
Chemical vapor deposition, Epilayers, Growth rate, Nitrogen, Pressure effects, Thermal effects, Cold wall reactor, Hot wall chemical vapour deposition, Incorporation mechanism, Silicon carbide
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63031OAI: oai:DiVA.org:kth-63031DiVA: diva2:481547
Note
References: Forsberg, U., Henry, A., Danielsson, O., Rorsman, N., Eriksson, J., Wahab, Q., Storasta, L., Janzén, E., (2000) Conference paper MRS, , Boston; Ekvi System 3.01 from Svensk EnergiData, B. Nolang, Dept. Of Inorganic Chemistry, Uppsala University, SwedenPrivate conversation with K. Larsson and J. Olander, Uppsala University, SwedenLofgren, P.M., Ji, W., Hallin, C., Gu, C.-Y., (2000) Journal of The Electrochemical Society, 147 (1), pp. 164-175; Larkin, D.J., Neudeck, P.G., Powell, J.A., Malus, L.G., (1994) Appl. Phys. Lett, 65 (13), pp. 1659-1661; Kimoto, T., Itoh, A., Matsunami, H., (1995) Appl. Phys. Lett, 67 (16), pp. 2385-2387 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M. K.

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