Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, H2.3.1-H2.3.6 p.Conference paper (Refereed)
Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.
Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, H2.3.1-H2.3.6 p.
, Silicon Carbide- Materials, Processing and Devices
Chemical reactors, Chemical vapor deposition, Electric variables measurement, Epitaxial growth, Interfaces (materials), Scanning electron microscopy, Secondary ion mass spectrometry, Semiconductor doping, Semiconductor growth, Silicon carbide, Capacitance-voltage measurement, Trimethylaluminum, MESFET devices
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-63032OAI: oai:DiVA.org:kth-63032DiVA: diva2:481548
References: Paisley, M.J., Irvine, K.G., Kordina, O., Singh, R., Palmour, J.W., Carter C.H., Jr., (1999), Preprint MRS San FranciscoEriksson, J., Rorsman, N., Zirath, H., Linarsson, M.K., Jonsson, R., Wahab, Q., Rudner, S., Conference Paper ECSCRM2000, Germany NR 201408052012-01-212012-01-212012-01-21Bibliographically approved