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Growth and characterisation of 4H-SiC MESFET structures grown by hot-wall CVD
KTH, School of Information and Communication Technology (ICT).ORCID iD: 0000-0002-0292-224X
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2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, H2.3.1-H2.3.6 p.Conference paper (Refereed)
Abstract [en]

Metal semiconductor field effect transistor, MESFET, structures have been grown in a hot-wall CVD reactor. Using trimethylaluminium and nitrogen as dopant sources, p- and n-type epitaxial layers were grown on semi insulating substrates. A comprehensive characterization study of thickness and doping of these structures has been performed by using scanning electron microscopy, secondary ion mass spectrometry, capacitance-voltage measurements. Each technique is discussed concerning its advantage and disadvantage. Some transistor properties of MESFETs processed on the grown material are presented.

Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, H2.3.1-H2.3.6 p.
, Silicon Carbide- Materials, Processing and Devices
Keyword [en]
Chemical reactors, Chemical vapor deposition, Electric variables measurement, Epitaxial growth, Interfaces (materials), Scanning electron microscopy, Secondary ion mass spectrometry, Semiconductor doping, Semiconductor growth, Silicon carbide, Capacitance-voltage measurement, Trimethylaluminum, MESFET devices
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-63032OAI: diva2:481548
References: Paisley, M.J., Irvine, K.G., Kordina, O., Singh, R., Palmour, J.W., Carter C.H., Jr., (1999), Preprint MRS San FranciscoEriksson, J., Rorsman, N., Zirath, H., Linarsson, M.K., Jonsson, R., Wahab, Q., Rudner, S., Conference Paper ECSCRM2000, Germany NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Henry, A.
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School of Information and Communication Technology (ICT)
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