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Investigation of lo-hi-lo and delta-doped silicon carbide structures
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2001 (English)In: Materials Research Society Symposium - Proceedings, Boston, MA, 2001, Vol. 640, H2.4.1-H2.4.6 p.Conference paper, Published paper (Refereed)
Abstract [en]

Feasibility of lo-hi-lo and delta-doped structures for evaluation of high-field silicon carbide material properties is investigated. Delta-doped structures are grown using the hot-wall CVD technique. Aluminum and nitrogen doping profiles are demonstrated with FWHM below 10 nm. Nitrogen doping transients are found to be slower than those for aluminum. The growth interrupt technique has been developed for achieving narrow nitrogen doping peaks. Lo-hi-lo structures were fabricated using the implantation-and-regrowth technique. Structures with confined avalanche multiplication are demonstrated using the lo-hi-lo and delta doping techniques. The effect of substrate imperfections on early avalanche breakdown is investigated using confined avalanche multiplication devices.

Place, publisher, year, edition, pages
Boston, MA, 2001. Vol. 640, H2.4.1-H2.4.6 p.
Series
Silicon Carbide- Materials, Processing and Devices
Keyword [en]
Aluminum, Chemical vapor deposition, Electric breakdown, Ion implantation, Nitrogen, Semiconductor device structures, Semiconductor doping, Semiconductor growth, Avalanche breakdown, Delta doped structures, Lo-hi-lo structures, Regrowth techniques, Silicon carbide
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-63033OAI: oai:DiVA.org:kth-63033DiVA: diva2:481550
Note
References: Amos, J.W., Elfe, T.B., (1978) IEEE Trans. on Electron Devices, 25 ED, p. 1160; Trew, R.J., Yan, J.B., Stoneking, D.E., (1988) IEEE Trans. on Microwave Theory and Techniques, 36 (12), p. 1873; Epigress, A.B., SE-22370 Lund, SwedenKonstantinov, A.O., Karlsson, S., Nilsson, P.-Å., Saroukhan, A.-M., Svedberg, J.-O., Nordell, N., Harris, C.I., Rorsman, N., (1999) MRS Symp. Proc., 572, p. 197; Nordell, N., Schöner, A., Linnarsson, M., (1997) J. Electron. Materials, 26, p. 187; noteKostantinov, A.O., Wahab, Q., Nordell, N., Lindefelt, U., (1998) J. Electron. Mater., 27, p. 335; noteNeudeck, P.G., Wei, H., Dudley, M., (1999) IEEE Trans on Electron Devices, 46 ED, p. 478 NR 20140805Available from: 2012-01-21 Created: 2012-01-21 Last updated: 2012-01-21Bibliographically approved

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Linnarsson, M.

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