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Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
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2011 (English)In: APPL PHYS EXPRESS, ISSN 1882-0778, Vol. 4, no 11, 111301- p.Article in journal (Refereed) Published
Abstract [en]

A microwave heating technique has been used for the electrical activation of Al(+) ions implanted in semi-insulating 4H-SiC. Annealing temperatures in the range of 2000-2100 degrees C and annealing time of 30 s have been used. The implanted Al concentration has been varied from 5 x 10(19) to 8 x 10(20) cm(-3). A minimum resistivity of 2 x 10(-2) Omega cm and about 70% electrical activation of the implanted Al have been measured at room temperature for an implanted Al concentration of 8 x 10(20) cm(-3) and microwave annealing at 2100 degrees C for 30 s.

Place, publisher, year, edition, pages
2011. Vol. 4, no 11, 111301- p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-63279DOI: 10.1143/APEX.4.111301ISI: 000298289700002ScopusID: 2-s2.0-81055137131OAI: diva2:482266
QC 20120123Available from: 2012-01-23 Created: 2012-01-23 Last updated: 2012-01-23Bibliographically approved

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Hallén, Anders
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