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Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In particular, SiC bipolar junction transistors (BJTs) are suitable for high temperature integrated circuits (ICs), due to the absence of a gate oxide.

This work focuses on design, fabrication and characterization of the first 4H-SiC integrated circuits realized at KTH. It deals with basic bipolar ICs suitable for high temperature and low voltage applications. Operation up to 300 °C of low-voltage 4H-SiC NPN bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) has been demonstrated. In the temperature range 27 - 300 °C stable noise margins of about 1 V have been achieved for a 2-input OR-NOR gate operated on -15 V supply voltage, and an oscillation frequency of about 2 MHz has been observed for a 3-stage ring oscillator.

The possibility of realizing PNP transistors and passive devices in the same process technology has also been investigated.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. , xiv, 57 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:04
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-63804ISBN: 978-91-7501-244-5 (print)OAI: oai:DiVA.org:kth-63804DiVA: diva2:482731
Presentation
2012-02-15, Sal/Hall C1, KTH Electrum, Isafjordsgatan 26, Kista, 10:15 (English)
Opponent
Supervisors
Note
QC 20120131Available from: 2012-01-31 Created: 2012-01-24 Last updated: 2012-01-31Bibliographically approved
List of papers
1. Measurements and simulations of lateral PNP transistors in a SiC NPN BJT technology for high temperature integrated circuits
Open this publication in new window or tab >>Measurements and simulations of lateral PNP transistors in a SiC NPN BJT technology for high temperature integrated circuits
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2011 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 679-680, 758-761 p.Article in journal (Refereed) Published
Abstract [en]

In this work, a 4H-SiC lateral PNP transistor fabricated in a high voltage NPN technology has been simulated and characterized. The possibility of fabricating a lateral PNP with a current gain larger than 1 has been investigated. Device and circuit level solutions have been performed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011
Keyword
4H-SiC, NPN, lateral PNP, Sziklay configuration, SPICE model
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-35628 (URN)10.4028/www.scientific.net/MSF.679-680.758 (DOI)000291673500183 ()2-s2.0-79955083743 (Scopus ID)
Conference
8th European Conference on Silicon Carbide and Related Materials, Sundvolden Conf Ctr, Oslo, NORWAY, AUG 29-SEP 02, 2010
Funder
StandUp
Note

QC 20150624

Available from: 2011-07-04 Created: 2011-07-04 Last updated: 2017-12-11Bibliographically approved
2. Bipolar Integrated OR-NOR Gate in 4H-SiC
Open this publication in new window or tab >>Bipolar Integrated OR-NOR Gate in 4H-SiC
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2011 (English)In: Proceedings of International Conference on Silicon Carbibe and Related Materials 2011, 2011Conference paper, Published paper (Refereed)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-72220 (URN)
Conference
ICSCRM 2011
Note
QC 20120130Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2012-01-31Bibliographically approved
3. Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
Open this publication in new window or tab >>Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, no 4, 1076-1083 p.Article in journal (Refereed) Published
Abstract [en]

Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2012
Keyword
Bipolar junction transistor (BJT), emitter coupled logic (ECL), high-temperature integrated circuits (ICs), OR-NOR gate, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-72233 (URN)10.1109/TED.2011.2182514 (DOI)000302083800028 ()2-s2.0-84859210119 (Scopus ID)
Projects
SSF HOTSiC
Funder
StandUpSwedish Foundation for Strategic Research , RE10-0011
Note

QC 20150624

Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2017-12-08Bibliographically approved

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