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Dimer-T(3) reconstruction of the Sm/Si(100)(2 x 3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 24, 245322- p.Article in journal (Refereed) Published
Abstract [en]

Silicon dimer-containing reconstructions on Si(100) can be induced by submonolayer amounts of rare earth (RE) metals. The tilt of dimer bonds in such reconstructions can be controlled by the coverage and electronic properties of RE adsorbates. In this study, we have utilized improved high-resolution photoelectron spectroscopy with the synchrotron radiation and density functional theory (DFT) calculations to exploit the structural and electronic properties of the Sm/Si(100)(2 x 3) system. A careful analysis of photoelectron spectra, in combination with DFT calculations of surface core-level shifts for silicon atoms in energetically plausible structural models, has allowed us to establish the favorable atomic configuration of Sm/Si(100)(2 x 3) with a buckled Si dimer and to explain characteristic features of Si 2p line shape in detail. It is shown that the dimer buckling leads to a significant core-level binding-energy splitting of the first-layer Si atoms, affecting the lower-binding-energy region of Si 2p spectra drastically. An interpretation of the Si 2p line shape for RE/Si(100)(2 x 3) that is based on combined initial state and complete screening data is suggested. The mechanism underlying the buckling and symmetrization of silicon dimers in RE/Si(100) reconstructions is discussed.

Place, publisher, year, edition, pages
2011. Vol. 84, no 24, 245322- p.
National Category
Metallurgy and Metallic Materials
URN: urn:nbn:se:kth:diva-63243DOI: 10.1103/PhysRevB.84.245322ISI: 000298563600006ScopusID: 2-s2.0-84855435611OAI: diva2:484478
QC 20120127Available from: 2012-01-27 Created: 2012-01-23 Last updated: 2012-01-27Bibliographically approved

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Vitos, Levente
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