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Sideband asymmetries in RF power LDMOS before and after digital predistortion
KTH, School of Electrical Engineering (EES), Signal Processing. KTH, School of Electrical Engineering (EES), Centres, ACCESS Linnaeus Centre.
University of Gävle. (Department of Electronics, Mathematics and Natural Sciences)
University of Gävle. (Center for Radio Measurement Technology)
Infineon Technologies.
2009 (English)Conference paper (Other academic)
Abstract [en]

The merging of the fields of RF engineering and signal processing has introduced concepts such as behavioral modeling and enabled digital linearization schemes for wireless devices, such as power amplifiers (PAs). Despite that this process has been going on for a number of years much work remains to be done. The links between physical behavior and mathematical models are far from well-understood as are the optimum strategies for device design. This study focus on digital predistortion properties of a one-stage PA consisting of a power transistor mounted in a test fixture. The device under test (DUT) is an Infineon PTF210451E, a 45W transistor intended for usage in the frequency bands 2010-2025 MHz and 2110-2170 MHz. The test fixture is also designed by Infineon Technologies.  The signal types used in the measurements are single and double carrier wideband code division multiple access (WCDMA) signals. The double carrier WCDMA signals have tone-spacings of 5, 10 and 15 MHz. Normal two-tone measurements are also presented.

Place, publisher, year, edition, pages
National Category
Signal Processing Telecommunications
URN: urn:nbn:se:kth:diva-67321OAI: diva2:484833
Radio Frequency Measurement Technology Conference. Gävle. 2009
QC 20120426Available from: 2012-01-27 Created: 2012-01-27 Last updated: 2012-04-26Bibliographically approved

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Landin, Per Niklas
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Signal ProcessingACCESS Linnaeus Centre
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