Low power 0.18 um CMOS ultra wideband inductor-less LNA design for UWB receiver
2010 (English)In: IEEE Asia-Pacific Conference on Circuits and Systems, Proceedings, APCCAS, 2010, 855-858 p.Conference paper (Refereed)
This paper presents an inductor-less low-noise amplifier (LNA) design for ultra-wideband (UWB) receivers and microwave access covering the frequency range from 0.4 to 5.7 GHz using 0.18-μm CMOS. Simulation results show that the voltage gain reaches a peak of 18.94 dB in-band with an upper 3-dB frequency of 5.7 GHz. The IIP3 is about 3 dBm and the noise figure (NF) ranges from 3.15-3.86 dB over the band of interest. Input matching is better than -8.79dB and the LNA consumes 5.77mW at 1.8V supply voltage. A figure of merit is used to compare the proposed design with recently published wideband CMOS LNAs. The proposed design achieves a superior voltage gain and tolerable NF, with the additional advantage of removing the bulky inductors. It is shown that the designed LNA without on-chip inductors achieves comparable performances with inductor-based designs.
Place, publisher, year, edition, pages
2010. 855-858 p.
capacitive cross-coupling, inductor-less low-noise amplifier, ultra-wideband (UWB) receiver
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-68745DOI: 10.1109/APCCAS.2010.5774927ScopusID: 2-s2.0-79959246283ISBN: 978-142447456-1OAI: oai:DiVA.org:kth-68745DiVA: diva2:485339
2010 Asia Pacific Conference on Circuit and System, APCCAS 2010; Kuala Lumpur; Malaysia 6 December 2010 through 9 December 2010
QC 201507142012-01-282012-01-282015-07-14Bibliographically approved