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Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC
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2011 (English)In: Optical Materials Express, ISSN 2159-3930, Vol. 1, no 8, 1439-1446 p.Article in journal (Refereed) Published
Abstract [en]

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 10(18) cm(-3) the samples exhibit the most intense luminescence when the concentration difference (n-type) is about 4.6 x 10(18) cm(-3). Raman spectroscopy studies further verified the doping type and concentrations for the samples. Furthermore, strong luminescence intensity in a large emission angle range was achieved from angle-resolved photoluminescence. The results indicate N-B doped fluorescent SiC as a good wavelength converter in white LEDs applications.

Place, publisher, year, edition, pages
Optical Society of America, 2011. Vol. 1, no 8, 1439-1446 p.
Keyword [en]
LIGHT-EMITTING-DIODES; NITROGEN-EXCITON COMPLEXES; EXTRACTION EFFICIENCY; QUANTUM EFFICIENCY; RAMAN-SCATTERING; LUMINESCENCE; PHOSPHOR; PHOTOLUMINESCENCE; CRYSTALS; DEVICES
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Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-70041ISI: 000299050200006Scopus ID: 2-s2.0-84859417434OAI: oai:DiVA.org:kth-70041DiVA: diva2:485967
Note
QC 20120130Available from: 2012-01-30 Created: 2012-01-30 Last updated: 2012-01-30Bibliographically approved

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Linnarsson, Margareta

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