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On gate capacitance of nanotube networks
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-6430-6135
KTH, School of Information and Communication Technology (ICT), Centres, VinnExcellence Center for Intelligence in Paper and Packaging, iPACK.
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2011 (English)In: IEEE Electron Device Letter, ISSN 0741-3106, Vol. 32, no 5, 641-643 p.Article in journal (Refereed) Published
Abstract [en]

This letter presents a systematic investigation of the gate capacitance CGof thin-film transistors (TFTs) based on randomly distributed single-walled carbon nanotubes (SWCNTs) in the channel. In order to reduce false counting of SWCNTs that do not contribute to current conduction, CG is directly measured on the TFTs using a well-established method for MOSFETs. Frequency dispersion of CG is observed, and it is found to depend on the percolation behavior in SWCNT networks. This dependence can be accounted for using an RC transmission line model. These results are of important implications for the determination of carrier mobility in nanoparticle-based TFTs.

Place, publisher, year, edition, pages
IEEE , 2011. Vol. 32, no 5, 641-643 p.
Keyword [en]
Frequency dependence, gate capacitance, nanotube networks, percolation, transmission line model
National Category
Engineering and Technology
Research subject
URN: urn:nbn:se:kth:diva-71801DOI: 10.1109/LED.2011.2118733ISI: 000289908500021ScopusID: 2-s2.0-79955531863OAI: diva2:487051
VINNOVA “iPack Vinnex Excellence Center”VR 2009-8068
© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. QC 20120214Available from: 2012-02-14 Created: 2012-01-31 Last updated: 2012-02-14Bibliographically approved

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