A 11.4dBm 90nm CMOS H-Bridge Resonating Polar Amplifier using RF Sigma Delta Modulation
2011 (English)In: Proceedings of the ESSCIRC (ESSCIRC), 2011, IEEE , 2011, 307-310 p.Conference paper (Refereed)
Using RF Sigma Delta Modulation (RFSDM), aclass-D polar amplifier in H-Bridge configuration can work in resonatingmode and minimize the switching loss for high efficiencypolar transmitters. The high oversampling ratio envelop bitstream created by the low pass RFSDM is phase modulated anddigitally mixed with quantized RF carrier to give a modulatedRF digital signal. By taking the advantage of high speed andaccurate digital CMOS process, this ’information combination’architecture can achieve high efficiency and reduce the need forexternal filter components. A polar power amplifier based on thisconcept is implemented in 90nm CMOS process and achieved apeak output power of 11.4dBm with 19.3% efficiency at 1.0Vpower supply. The total area is 0.72mm2 including an on-chipfilter matching network designed for 2.4GHz to 2.7GHz band.
Place, publisher, year, edition, pages
IEEE , 2011. 307-310 p.
Low Pass RF Sigma Delta Modulation, H-Bridge Digital Polar Amplifier, on-Chip Filter Matching Network, Digital Delay Trimming
IdentifiersURN: urn:nbn:se:kth:diva-72181DOI: 10.1109/ESSCIRC.2011.6044968ScopusID: 2-s2.0-82955241335ISBN: 978-1-4577-0703-2OAI: oai:DiVA.org:kth-72181DiVA: diva2:487265
Qc 201202032012-02-032012-01-312013-01-29Bibliographically approved