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Bipolar Integrated OR-NOR Gate in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2011 (English)In: Proceedings of International Conference on Silicon Carbibe and Related Materials 2011, 2011Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2011.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-72220OAI: oai:DiVA.org:kth-72220DiVA: diva2:487304
Conference
ICSCRM 2011
Note
QC 20120130Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2012-01-31Bibliographically approved
In thesis
1. Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Open this publication in new window or tab >>Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In particular, SiC bipolar junction transistors (BJTs) are suitable for high temperature integrated circuits (ICs), due to the absence of a gate oxide.

This work focuses on design, fabrication and characterization of the first 4H-SiC integrated circuits realized at KTH. It deals with basic bipolar ICs suitable for high temperature and low voltage applications. Operation up to 300 °C of low-voltage 4H-SiC NPN bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) has been demonstrated. In the temperature range 27 - 300 °C stable noise margins of about 1 V have been achieved for a 2-input OR-NOR gate operated on -15 V supply voltage, and an oscillation frequency of about 2 MHz has been observed for a 3-stage ring oscillator.

The possibility of realizing PNP transistors and passive devices in the same process technology has also been investigated.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. xiv, 57 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:04
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-63804 (URN)978-91-7501-244-5 (ISBN)
Presentation
2012-02-15, Sal/Hall C1, KTH Electrum, Isafjordsgatan 26, Kista, 10:15 (English)
Opponent
Supervisors
Note
QC 20120131Available from: 2012-01-31 Created: 2012-01-24 Last updated: 2012-01-31Bibliographically approved

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Zetterling, Carl-MikaelMalm, B. Gunnar

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Lanni, LuigiaGhandi, RezaDomeij, MartinZetterling, Carl-MikaelMalm, B. GunnarÖstling, Mikael
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Citation style
  • apa
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